FDU8770 mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 35A * Max rDS(on) = 5.5mΩ at VGS = 4.5V, ID = 35A * Low gate charge: Qg(10) = 52nC(Typ), VGS = 10V * Low gate.
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